Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE
| Autor: | K. Moszak, Damian Pucicki, M. Rudziński, Jarosław Serafińczuk, W. Olszewski, Detlef Hommel, K. Opolczynska, Robert Kudrawiec |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication Analytical chemistry General Physics and Astronomy Heterojunction 02 engineering and technology Density estimation 021001 nanoscience & nanotechnology 01 natural sciences Isotropic etching chemistry.chemical_compound chemistry Etching (microfabrication) 0103 physical sciences Metalorganic vapour phase epitaxy Dislocation 0210 nano-technology Phosphoric acid |
| Zdroj: | Journal of Applied Physics. 126:165304 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5100140 |
| Popis: | Selection of a suitable chemical etching method for threading dislocations density estimation is crucial for the structural characterization of epilayers grown by MOVPE and thus further for device fabrication. In this work, threading dislocations density in single layer and Al xGa 1 − xN/GaN periodical heterostructures has been investigated by means of chemical etching and XRD analysis. For chemical etching, two types of agents have been used: phosphoric acid ( 220 ° C / 7.5 min) and a molten mixture of KOH-NaOH ( 440 ° C / 2.5 min). Estimation of dislocation density has been carried out on the basis of SEM images. It was shown that defect-selective etching in molten alkaline solution is more effective than etching in phosphoric acid and provides more accurate data that are in agreement with data obtained from XRD characterization.Selection of a suitable chemical etching method for threading dislocations density estimation is crucial for the structural characterization of epilayers grown by MOVPE and thus further for device fabrication. In this work, threading dislocations density in single layer and Al xGa 1 − xN/GaN periodical heterostructures has been investigated by means of chemical etching and XRD analysis. For chemical etching, two types of agents have been used: phosphoric acid ( 220 ° C / 7.5 min) and a molten mixture of KOH-NaOH ( 440 ° C / 2.5 min). Estimation of dislocation density has been carried out on the basis of SEM images. It was shown that defect-selective etching in molten alkaline solution is more effective than etching in phosphoric acid and provides more accurate data that are in agreement with data obtained from XRD characterization. |
| Databáze: | OpenAIRE |
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