Emitter Formation and Passivation Dependence on Crystal Grain Orientations after Atmospheric Pressure Dry Nanotexturing
| Autor: | Ridoy, A.I., Kafle, B., Saint-Cast, P., Lohmüller, S., Norouzi, M.H., Clochard, L., Duffy, E., Hofmann, M., Rentsch, J., Preu, R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: | |
| DOI: | 10.4229/35theupvsec20182018-2av.2.37 |
| Popis: | 35th European Photovoltaic Solar Energy Conference and Exhibition; 606-609 In this work, we investigate the emitter performance of the multicrystalline silicon (mc-Si) solar cell as a function of the crystallographic orientation of the grains and the associated texturing level. Here, we applied a plasma-less nanotexturing process by atmospheric pressure dry etching that enables low reflectivity, followed by a short anisotropic alkaline etch. It is seen in our investigation that grains with lower reflection exhibit lower emitter sheet resistance (Rsh ≈ 72 Ω/sq.) than that of grains with higher reflection (Rsh ≈ 79 Ω/sq.). We show that with our current etching process flow, there is a linear correlation between charge carrier lifetime and weighted surface reflection of different grains in a mc-Si wafer. |
| Databáze: | OpenAIRE |
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