Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer
| Autor: | Mohammad Ali Sadeghzadeh, Maryam Gholizadeh Arashti |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Passivation Physics::Instrumentation and Detectors business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Computer Science::Other Surfaces Coatings and Films Characterization (materials science) Optoelectronics Molecule Surface charge Thin film business Instrumentation Layer (electronics) Quantum well Surface states |
| Zdroj: | Vacuum. 101:267-270 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2013.09.008 |
| Popis: | Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in the SiGe quantum well in the structure covered by PQ thin film is attributed to electrical passivation of Si surface states. Finally, the density of Si surface states (state/eV cm2), and surface Fermi level position, have been evaluated via Modified Mid-gap Pinning Model (MMPM) applied to experimental results. |
| Databáze: | OpenAIRE |
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