Investigation of Aluminum Metallized Source/Drain Thin Film Transistors Using a Self-Aligned Fabrication Process
| Autor: | Byoungdeog Choi, Kwang-Ryul Kim, Dang Ngoc Son, Sungwook Jung, Nguyen Van Duy, Nguyen Thanh Nga, Wonbaek Lee, Junsin Yi |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Fabrication Dopant Silicon business.industry Doping General Engineering General Physics and Astronomy Field effect chemistry.chemical_element engineering.material chemistry.chemical_compound Polycrystalline silicon chemistry Thin-film transistor Silicide engineering Optoelectronics business |
| Zdroj: | Japanese Journal of Applied Physics. 49:096502 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.49.096502 |
| Popis: | For a better thin film transistor performance, metal silicide has been studied in order to enhance the conductivity of the source and drain electrodes. Although aluminum does not form a metal silicide with silicon, the two materials interpenetrate in an induced crystallization process. In such a structure, aluminum can act as a p-type dopant in the silicon lattice. In this work, aluminum metallized source/drain thin film transistors with excimer laser-annealed polycrystalline silicon were fabricated using a simple self-aligned process. The source/drain regions were patterned with a lift-off process. The n-channel characteristics of the as-deposited aluminum source/drain were explored and an improvement in the performance was observed after a heat treatment at 250 °C for 1 h. The devices treated at 350 °C for 10 h exhibited p-channel characteristics. The device characteristics were compared with another fabricated p-type doped source/drain structure. A remarkable enhancement in the performance of the aluminum metallized source/drain devices was observed. These structures yielded a peak field effect mobility of about 105 cm2·V-1·s-1. The simple fabrication process and resulting enhancement in device performance makes this type of structure ideal for use in thin film transistors on glass. |
| Databáze: | OpenAIRE |
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