Atomic Layer Deposition of Antimony and its Compounds Using Dechlorosilylation Reactions of Tris(triethylsilyl)antimony
| Autor: | Timo Hatanpää, Marianna Kemell, Kenichiro Mizohata, Viljami Pore, Markku Leskelä, Tiina Sarnet, Mikko Ritala, Kjell Knapas |
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| Rok vydání: | 2010 |
| Předmět: |
Tris
Materials science General Chemical Engineering Inorganic chemistry chemistry.chemical_element In situ reaction 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Antimony compounds 01 natural sciences 0104 chemical sciences Atomic layer deposition chemistry.chemical_compound Phase change Metal halides Antimony chemistry Materials Chemistry Thin film 0210 nano-technology |
| Zdroj: | Chemistry of Materials. 23:247-254 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm102904f |
| Popis: | For the first time an element other than a metal was deposited by atomic layer deposition (ALD). Pure and conformal thin films of elemental antimony were prepared by ALD using SbCl3 and (Et3Si)3Sb as precursors. In situ reaction mechanism studies showed that the dehalosilylation reactions involved are very efficient in eliminating the ligands from the growing surface enabling the use of low growth temperatures down to 95 °C. Various antimony compounds, such as GeSb, Sb2Te, GaSb, and AlSb, can also be deposited by reacting (Et3Si)3Sb with other metal halides or mixing Sb growth cycles with other ALD processes. The new antimony ALD process is a major step in the realization of non-volatile phase change random access memories (PCRAM) and ALD of III−V compounds. |
| Databáze: | OpenAIRE |
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