SIMS-depth profile and microstructure studies of Ti-diffused Mg-doped near-stoichiometric lithium niobate waveguide

Autor:	Kazuya Terabe, Isao Sakaguchi, F. Yamamoto, Shunji Takekawa, Xiaolian Liu, Haruki Ryoken, Hajime Haneda, J. Ichikawa, Masaru Nakamura, R. Mohan Kumar, K. Kitamura
Rok vydání:	2006
Předmět:	Diffusion Doping Lithium niobate Analytical chemistry Substrate (electronics) Condensed Matter Physics Electron beam physical vapor deposition Evaporation (deposition) Inorganic Chemistry Crystal chemistry.chemical_compound chemistry Materials Chemistry Surface roughness
Zdroj:	Journal of Crystal Growth. 287:472-477
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.11.069
Popis:	Ti-diffused planer waveguides have been fabricated on pure and Mg-doped near stoichiometric lithium niobate (SLN). Secondary ion mass spectroscopy method was applied to study the Ti diffusion in 1 mol% Mg-doped Z-cut SLN crystal. 100 nm Ti film has been deposited on LN substrate by e-beam evaporation at room temperature. Diffusion constant value for Mg-doped SLN is lower (1.84×10 −13 cm −2 /s) than that of pure SLN. Mg-doped CLN also possesses low diffusion constant value of 1.27×10 −13 cm −2 /s due to higher doping concentration of Mg (5 mol%). AFM topographic observation reveals that Mg-doped SLN shows lower surface roughness than Mg-doped CLN. The roughness (peak to valley) of the Ti-diffused Mg:SLN is 20 nm compared to 62 nm for the congruent LN waveguide. These features make Mg:SLN highly attractive for the fabrication of efficient waveguides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c3f7278696d785003b384186be1646a https://doi.org/10.1016/j.jcrysgro.2005.11.069 Zobrazit plný text záznamu Full Text from ScienceDirect