Efficiency droop enhancement in AlGaN deep ultraviolet light-emitting diodes by making whole barriers but the bottom Mg doped
| Autor: | Yang Xian, Zhiyou Guo, Zhang Zhuding, Cheng Zhang, Yi Xinyan, Huiqing Sun, Sun Jie, Xuancong Fan |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0103 physical sciences Optoelectronics General Materials Science Quantum efficiency Voltage droop Spontaneous emission Electrical and Electronic Engineering 0210 nano-technology business Electronic band structure p–n junction Diode |
| Zdroj: | Superlattices and Microstructures. 97:371-377 |
| ISSN: | 0749-6036 |
| Popis: | Ultra violet light-emitting diodes (UVLEDs) with different types of Mg-doped barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation results show that the UVLED with only a p-doped top barrier get little enhancement comparing to the conventional one, on the contrary the structure with p-doping in all but the bottom barriers has a much better optical and electrical properties due to enhancement of the holes’ injection and the electrons’ confinement. The efficiency droop is significantly alleviated and the light output power is greatly enhanced. To avoid forming a PN junction by the bottom barrier and the n-AlGaN in the proposed structure, therefore, the bottom barrier isn’t p-doped. Then structures with different hole densities in the Mg-doped barriers have been studied numerically and that confirmed the best. |
| Databáze: | OpenAIRE |
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