Intrinsic reliability of a 12V field plate pHEMT
| Autor: | T. Arnold, Craig A. Gaw, Karen E. Moore |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Engineering
business.industry Electrical engineering High voltage Failure rate High-electron-mobility transistor Condensed Matter Physics Cable television Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Acceleration Reliability (semiconductor) Electrical and Electronic Engineering Safety Risk Reliability and Quality business Microwave Communication channel |
| Zdroj: | Microelectronics Reliability. 48:974-984 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2008.03.009 |
| Popis: | High voltage 12 V GaAs-based pHEMT devices are a commercial work horse for higher frequency infrastructure applications, including cable television, cellular base stations, and, potentially, WiMAX™ (worldwide interoperability for microwave access). For the device described here a self-aligned field plate was integrated into Freescale’s production 12 V pHEMT process to achieve high breakdown (>30 V) and high gain for 3.55 GHz operation. The reliability of this 12 V field plate pHEMT device and a standard 12 V pHEMT device were evaluated using both a conventional three temperature DC accelerated stress test and a series of temperature step stress tests. Also, the potential effect of current acceleration in the field plate device was measured. For the targeted infrastructure applications the 12 V field plate pHEMT device exceeds the reliability target at T CHANNEL = 150 °C of 20 years of operation at a 1 ppm failure rate by a significant margin. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect