Investigations of heavy ion irradiation of gallium nitride nanowires and nanocircuits
| Autor: | M. P. Petkov, D. Liu, Virginia M. Ayres, Joshua B. Halpern, R. M. Ronningen, A.F. Zeller, M.E. Englund, Martin A. Crimp, G.L. Harris, Benjamin W. Jacobs, Maoqi He, Harry Shaw, E.H. Carey |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Mechanical Engineering Nanowire Analytical chemistry Gallium nitride General Chemistry Nitride Electronic Optical and Magnetic Materials Ion chemistry.chemical_compound chemistry Transition metal Materials Chemistry Field-effect transistor Irradiation Electrical and Electronic Engineering Coaxial |
| Zdroj: | Diamond and Related Materials. 15:1117-1121 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2005.11.055 |
| Popis: | Results of a first investigation of the response of gallium nitride nanowires to high-Z heavy ion irradiation are reported. Pre-irradiation characterization of the gallium nitride nanowires used in these experiments showed that that they had a two-phase coaxial structure, consisting of an outer shell of zinc–blende-phase gallium nitride and a coaxial core of wurtzite-phase gallium nitride. Observed radiation interactions with the two-phase structure are reported. A nanowire-based field effect transistor using these GaN nanowires showed normal real-time operation during irradiation by Krypton-78 heavy ions under high bias conditions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect