| Autor: |
Vyacheslav A. Berezovets, Konstantin D. Moiseev, V. I. Nizhankovskii, Robert V. Parfeniev, Maya P. Mikhailova, Yury P. Yakovlev |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.514547 |
| Popis: |
The observation of the Quantum Hall effect (QHE) in a semimetal channel with coexisting electrons and holes, simultaneously, at the type II broken-gap p-GaIn0.16As0.22Sb/p-InAs single heterointerface based on unintentionally doped quaternary solid solution obtained by liquid phase epitaxy (LPE) was reported for the first time elsewhere. In this report the quantum magnetotransport in the p-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructure has been studied for a set of the samples with the both undoped and doped with Zn impurity quaternary layer at low temperatures in high magnetic fields up to 14 T.© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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