Modeling growth of Si1−xGexepitaxial films from disilane and germane

Autor:	Pallab Bhattacharya, Erdogan Gulari, S. H. Li, Rajeev Malik
Rok vydání:	1993
Předmět:	Analytical chemistry General Physics and Astronomy chemistry.chemical_element Germanium Crystal growth Substrate (electronics) Epitaxy chemistry.chemical_compound chemistry Germane Physical chemistry Disilane Thin film Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 73:5193-5196
ISSN:	1089-7550 0021-8979
Popis:	A Langmuir–Hinshelwood‐type kinetic model is developed for modeling growth of silicon–germanium alloys from disilane and germane on Si substrates. Gas source molecular beam epitaxy was employed to grow Si1−xGex films at various germanium fractions, x, in the alloy and at different temperatures. The model correctly predicts experimentally observed and previously reported behavior; a monotonic decrease with germanium fraction at higher substrate temperatures (700 °C) and a maximum in the growth rate for lower temperatures (550 °C and 610 °C).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c1a8c1fb838012ec4b4c14700de7ba3 https://doi.org/10.1063/1.353745 Zobrazit plný text záznamu