Response Mechanisms of Additional Displacement Defects in Oxides to Ionization Damage in Bipolar Transistors

Autor:	Enhao Guan, Zhongli Liu, Tao Ying, Yadong Wei, Yubao Zhang, Xiuhai Cui, Gang Lv, Weiqi Li, Jianqun Yang, Xingji Li
Rok vydání:	2023
Předmět:	Nuclear and High Energy Physics Nuclear Energy and Engineering Electrical and Electronic Engineering
Zdroj:	IEEE Transactions on Nuclear Science. 70:768-773
ISSN:	1558-1578 0018-9499
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c157ee2603f9abc33416c42dc7e8fe3 https://doi.org/10.1109/tns.2023.3257775 Zobrazit plný text záznamu