A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers
| Autor: | Ed Maxwell, Francis K. Chai, Mike Mallinger, Mar Caballero, Dumitru Sdrulla, Bruce Odekirk, Terri Fields |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Amplifier RF power amplifier Transistor Electrical engineering Multiple-emitter transistor Hardware_PERFORMANCEANDRELIABILITY law.invention Hardware_GENERAL law Optical transistor Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Radio frequency business Hardware_LOGICDESIGN Static induction transistor |
| Zdroj: | 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs. |
| DOI: | 10.1109/ispsd.2011.5890850 |
| Popis: | A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3” 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance. |
| Databáze: | OpenAIRE |
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