High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction
| Autor: | Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Bo Ting Liou, Man-Fang Huang, Fang-Ming Chen |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Extraction (chemistry) Optical polarization 01 natural sciences Electronic Optical and Magnetic Materials law.invention Wavelength law 0103 physical sciences Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Quantum Quantum well Diode Light-emitting diode |
| Zdroj: | IEEE Transactions on Electron Devices. 66:976-982 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2887074 |
| Popis: | In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al0.64Ga0.36N QBs, n-Al0.7Ga0.3N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874. |
| Databáze: | OpenAIRE |
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