A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability

Autor:	Zheng Shen, Jun Wang, Hengyu Yu, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:5104-5109
ISSN:	1557-9646 0018-9383
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c027690d35af7ab5c26aabdc3c13a1b https://doi.org/10.1109/ted.2022.3192509 Zobrazit plný text záznamu