The plasma characteristics and film formation generated by the electron cyclotron resonance mechanism
| Autor: | Yong-Jin Kim, Hong-Young Chang, Jung-Hyung Kim, Sun-Kyu Song, Pyung-Woo Lee |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Electron density Materials science Silicon Plasma parameters chemistry.chemical_element Condensed Matter Physics Electron cyclotron resonance symbols.namesake chemistry.chemical_compound Nuclear magnetic resonance Silicon nitride chemistry Physics::Plasma Physics Physics::Space Physics symbols Langmuir probe Plasma diagnostics Thin film Atomic physics |
| Zdroj: | IEEE Transactions on Plasma Science. 22:235-241 |
| ISSN: | 0093-3813 |
| DOI: | 10.1109/27.297872 |
| Popis: | Silicon nitride thin film (SiN/sub x/) is deposited onto the 3 inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from N/sub 2/-SiH/sub 4/ electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determined by optical emission spectroscopy. From the comparison of the uniformities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is related to that of radical density rather than plasma density. The dependence of the uniformity film thickness on the waveguide mode was also examined. > |
| Databáze: | OpenAIRE |
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