Simulations of Mask Error Enhancement Factor in 193 nm Immersion Lithography

Autor:	Kwei-Tin Yeh, Wen-an Loong
Rok vydání:	2006
Předmět:	Physics Physics and Astronomy (miscellaneous) business.industry Resolution (electron density) General Engineering General Physics and Astronomy Image contrast Numerical aperture Dipole Optics Optoelectronics Off-axis illumination business Immersion lithography Line (formation)
Zdroj:	Japanese Journal of Applied Physics. 45:2481-2496
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.45.2481
Popis:	In general, better resolution and lower mask error enhancement factor (MEEF) are obtained when a higher numerical aperture (NA) is used. However, simulations in this study show that, if Y-polarized light and off-axis illuminations were used, higher NA leads to higher MEEF for smaller and dense feature line sizes in 193 nm immersion lithography. The reversal of the MEEF was clearly observed, especially in the presence of a dipole. When the feature size decreased to the resolution limit, the MEEF rose enormously. Simulations also show that the MEEF is inversely proportional to the cubic root of image contrast in most cases in this study.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6bfba69ba6bd49256f9da44e961b4989 https://doi.org/10.1143/jjap.45.2481 Zobrazit plný text záznamu