Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration
| Autor: | H.J. Hwang, Y.S. Lee, T.M.H. Nyugen, C.H. Kim, S. Some, S.M. Kim, Byoung Hun Lee, H.I. Lee, Seung-Goo Kang, J.W. Oh |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Dielectric strength business.industry 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Annealing (glass) Atomic layer deposition Reliability (semiconductor) Thermodynamic cycle 0103 physical sciences Optoelectronics Deposition (phase transition) 0210 nano-technology business Uv treatment |
| Zdroj: | IRPS |
| Popis: | For heterogeneous integration, the heat cycle constraint limits the available number of options for the process of fabricating high-quality reliable high-k dielectrics, for example, post-deposition annealing and high-temperature deposition. To solve this problem, we examine the effects of H 2 O 2 /UV treatment on the reliability characteristics of low-temperature-grown HfO 2 via atomic layer deposition, wherein it is treated with a minimal post-deposition heat cycle. The leakage current and time zero dielectric breakdown characteristics of the H 2 O 2 /UV treated Hf02 are drastically improved without having applied the post-deposition heat cycle, compared with those of the control group that undergoes O 2 post-deposition annealing. The proposed process is a promising method to improve the quality of dielectrics for heterogeneous integration. |
| Databáze: | OpenAIRE |
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