Device operation mechanism of field-effect transistors with high mobility donor-acceptor polymer semiconductors

Autor:	Takayuki Okachi, Tomoya Kashiki, Kenichiro Ohya
Rok vydání:	2015
Předmět:	Electron mobility Materials science business.industry Transistor Induced high electron mobility transistor Electron Molecular physics law.invention Organic semiconductor Semiconductor law Optoelectronics Field-effect transistor business HOMO/LUMO
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.2187572
Popis:	The mechanism of high field-effect mobility observed recently in transistors with donor-acceptor alternating polymers was experimentally and numerically examined. It was revealed that the trapped electrons injected from the drain electrode into the lowest unoccupied molecular orbital states of semiconductor polymers cause a deviation from the ideal transistor curve and result in an overestimation of hole mobilities. The field-effect mobility of 19 cm2/Vs was deduced by the standard formula for extracting mobility in the saturation regime after electron trapping, while the true mobility of 0.84 cm2/Vs was extracted before electron trapping.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6bd827562807b907bec89393b1cbabdc https://doi.org/10.1117/12.2187572 Zobrazit plný text záznamu