Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)‖SiC (0001) with low ferromagnetic resonance linewidths

Autor:	Katherine S. Ziemer, Carmine Vittoria, Zhuhua Cai, Michael E. McHenry, Aria Yang, Vincent G. Harris, Antone Gieler, Zhaohui Chen, P. R. Ohodnicki, Trevor L. Goodrich, K. Y. Goh
Rok vydání:	2007
Předmět:	Magnetic anisotropy Magnetization Nuclear magnetic resonance Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Annealing (metallurgy) X-ray crystallography Epitaxy Ferromagnetic resonance Molecular beam epitaxy Pulsed laser deposition
Zdroj:	Applied Physics Letters. 91:182505
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2794011
Popis:	Barium hexaferrite (BaM) films were deposited on 10nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe12O19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16900Oe, a magnetization (as 4πMs) of 4.4kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53GHz of 96Oe, thus demonstrating sufficient properties for microwave device applications.
Databáze:	OpenAIRE
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