Annealing temperature effects on structural and magnetic properties of Ga1−xMnxN films

Autor:	Xingguo Gao, Shicai Xu, B.Y. Man, Bin Hu, C.C. Wang, C.S. Chen, M. Liu
Rok vydání:	2012
Předmět:	Materials science Annealing (metallurgy) Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Amorphous solid Condensed Matter::Materials Science Paramagnetism symbols.namesake Nuclear magnetic resonance Ferromagnetism X-ray photoelectron spectroscopy Condensed Matter::Superconductivity Materials Chemistry symbols Thin film Raman spectroscopy Molecular beam epitaxy
Zdroj:	Surface Engineering. 28:540-543
ISSN:	1743-2944 0267-0844
Popis:	Amorphous gallium nitride doped with Mn thin films was deposited on sapphire (0001) substrates by laser molecular beam epitaxy. After simple processing of annealing at different temperatures for 30 min in ammonia atmosphere, good quality Ga1−xMnxN films were obtained. In order to investigate the influence of annealing temperature on the crystalline quality and structural and magnetic properties, the films are analysed by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy and alternating gradient magnetic field meter. The results show that the annealing can improve the quality of Ga1−xMnxN films, and the optimum annealing temperature is 1050°C; moreover, there is no second phase forming. Through magnetic analysis, we obtained the annealed samples of room temperature ferromagnetic property and paramagnetism of the as grown film and obtained the way of changing the paramagnetism into ferromagnetism using the simple method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6bd5fae1a8918ac09a89f53c5b052361 https://doi.org/10.1179/1743294412y.0000000014 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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