Nonlinear Absorption Processes at Half the Band gap in GaAs Based Semiconductors

Autor: A. Villeneuve, G.I. Stegeman, G. Scelsi, C.N. Ironside, J.S. Aitchison, J.T. Boyd
Rok vydání: 1991
Zdroj: Nonlinear Guided-Wave Phenomena.
DOI: 10.1364/nlgwp.1991.tuc2
Popis: The utility of the ultrafast nonlinearity in semiconductor waveguides operated below the band gap is limited by two photon absorption β (α = βI where I is the intensity) which does not allow a nonlinear 2π phase shift over one absorption length. [1] However, the two photon coefficient should be zero below half the band gap, potentially allowing for all-optical device operation there.[2,3] Here we report the first measurements of two photon absorption in GaAs waveguides in the vicinity of half the band gap.
Databáze: OpenAIRE