An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch

Autor:	L.D. Reynolds, R. Mozzi, Y. Ayasli, L.K. Hanes
Rok vydání:	2005
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry X band Optoelectronics Insertion loss Equivalent circuit Breakdown voltage business Electrical impedance Monolithic microwave integrated circuit Gallium arsenide
Zdroj:	Microwave and Millimeter-Wave Monolithic Circuits.
DOI:	10.1109/mcs.1982.1112178
Popis:	A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6bbb0a5bc4dcc61743ba51678b07f3c4 https://doi.org/10.1109/mcs.1982.1112178 Zobrazit plný text záznamu