On the atomic structure of the Nb/Al2O3 interface and the growth of Al2O3 particles
Autor: | M. Kuwabara, J. C. H. Spence, M. Ruhle |
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Rok vydání: | 1989 |
Předmět: |
Oxide minerals
Materials science Condensed matter physics Auger effect Mechanical Engineering Diffusion Inorganic chemistry Condensed Matter Physics Electron spectroscopy symbols.namesake X-ray photoelectron spectroscopy Mechanics of Materials symbols General Materials Science Dislocation Thin film Internal oxidation |
Zdroj: | Journal of Materials Research. 4:972-977 |
ISSN: | 2044-5326 0884-2914 |
DOI: | 10.1557/jmr.1989.0972 |
Popis: | The growth mechanism for small precipitates of Al2O3 formed by internal oxidation in the Nb–Al2O3 interface is studied in detail. The observations show that the Nb (001)/Al2O3 (00.1) interface is almost atomically flat and that there are no interface compounds. We suggest that the final layer on the Al2O3 side of this interface consists of oxygen atoms. The effects of image forces on misfit dislocations are found to result in a standoff distance between dislocation cores and the interface, in good agreement with the recent theory. The implications of this for the strength of metal-ceramic bonding are discussed. |
Databáze: | OpenAIRE |
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