GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS: OPTICAL PROPERTIES ENGINEERING AND APPLICATION
| Autor: | E. Sorokin, I. T. Sorokina, V. V. Preobrazhenskii, M. M. Putyato, A. A. Kovalyov, N. N. Rubtsova, O. P. Pchelyakov |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction business.industry Bioengineering Saturable absorption Heterojunction Condensed Matter Physics Laser Computer Science Applications law.invention Crystal Semiconductor Quantum dot law Optoelectronics General Materials Science Electrical and Electronic Engineering business Quantum well Biotechnology |
| Zdroj: | International Journal of Nanoscience. :315-318 |
| ISSN: | 1793-5350 0219-581X |
| Popis: | MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings. |
| Databáze: | OpenAIRE |
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