TfC16. Growth of perovksite PLZT thin films by dual ion beam sputtering
| Autor: | J. S. Obhi, N. M. Shorrocks, Roger W. Whatmore, D. A. Tossell |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Optics chemistry Sputtering visual_art visual_art.visual_art_medium Sapphire Optoelectronics Electrical measurements Lead titanate Ceramic Thin film business Perovskite (structure) |
| Zdroj: | Ferroelectrics. 134:297-302 |
| ISSN: | 1563-5112 0015-0193 |
| DOI: | 10.1080/00150199208015603 |
| Popis: | PLZT thin films have been deposited using the emerging PVD technique of dual ion-beam sputtering (DIBS). The DIBS process produces high quality orientated perovskite films of bulk refractive index, good stoichiometry and full density, i.e., few pinholes. Films have been formed at 500–600°C onto sapphire, fused silica, Mg0 and silicon substrates by sputtering from an adjustable composite PLZT ceramic/Ti and Pb metallic target. Some substrates were coated with platinum prior to deposition to allow longitudinal electrical measurements on the films. Perovskite lead titanate PLZT (0/0/100), PLZT (10/0/100) and PLZT (28/0/100) films have been grown, the former two are of interest for thin film pyroelectric detectors whereas the latter is a quadratic electro-optic suited to optical waveguide, shutter and switching applications. |
| Databáze: | OpenAIRE |
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