Mass production of p-type Cz silicon solar cells approaching average stable conversion efficiencies of 22 %
| Autor: | Janko Cieslak, Fabian Fertig, D. Meißner, D.J.W. Jeong, Martin Schaper, C. Klenke, Klaus Duncker, Steffen Geißler, Friederike Kersten, B. Reiche, A. Schönmann, A. Schwabedissen, M. Gundermann, A. Weihrauch, Ansgar Mette, Ronny Lantzsch, B. Faulwetter-Quandt, Matthias Bartzsch, Jörg Müller, L. Niebergall, Stefan Hörnlein, Markus Fischer, E. Jarzembowski, T. Rudolph, M. Junghänel, A. Eidner, Florian Stenzel, Andreas Mohr, D. Wissen, A. Hofmann, Maximilian Kauert, S. Peters |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Energy conversion efficiency chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Temperature induced Monocrystalline silicon Cz silicon Optics chemistry 0103 physical sciences Degradation (geology) Optoelectronics 0210 nano-technology business Common emitter |
| Zdroj: | Energy Procedia. 124:338-345 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2017.09.308 |
| Popis: | Within this work, both the performance and reliability of industrial p -type monocrystalline solar cells with dielectrically passivated rear side and corresponding modules are investigated. Results of the mass production of Q.ANTUM solar cells at Hanwha Q CELLS on boron-doped p -type Czochralski-grown silicon (Cz-Si) substrates are presented, exceeding 21.5 % average conversion efficiency. Without power-enhancing measures such as the use of half cells, multi-wire approaches or light-capturing ribbons, essentially all currently (as of March 2017) produced Cz-Si Q.ANTUM solar modules exhibit output powers of > 300 Wp with 60 full 4-busbar cells. In terms of reliability, light-induced degradation (LID) is investigated in detail, with conditions relevant for the activation of, both, the boron-oxygen (BO) defect, and, so-called “Light and Elevated Temperature Induced Degradation” (LeTID). While the formation of the BO defect has been considered the most prominent LID mechanism in boron-doped p -type Cz-Si, LeTID has so far been discussed mainly as a potential issue for passivated emitter and rear cells (PERC) on multicrystalline silicon (mc-Si) substrates. This work shows that, if not adequately suppressed, LeTID can also occur in p -type Cz-Si PERC with a degradation in output power of up to > 6 %, which cannot be suppressed in a straightforward manner by conventional processing steps to permanently deactivate the BO defect. In contrast to conventional PERC, Hanwha Q CELLS’ Q.ANTUM technology is shown to reliably suppress, both, LID due to BO defect formation, and , LeTID in modules manufactured from, both, p -type mc-Si and Cz-Si substrates. |
| Databáze: | OpenAIRE |
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