Characterization of a porous silicon carbide layer produced on a 6H-SiC substrate: TEM (XHREM) and EDX studies

Autor:	L. M. Sorokin, Jeremy Sloan, John L. Hutchison, N S Savkina, G. N. Mosina, C. J. D. Hetherington, A A Lebedev
Rok vydání:	2018
Předmět:	Porous silicon carbide Materials science Sic substrate Composite material Layer (electronics) Characterization (materials science)
Zdroj:	Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
DOI:	10.1201/9781351074636-17
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6b6867a1ca804d8500ae2d0c4ef9a91a https://doi.org/10.1201/9781351074636-17 Zobrazit plný text záznamu