Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)
| Autor: | Vladimir V. Fedorov, E. V. Pirogov, M. S. Sobolev, Alexey M. Mozharov, Ivan Mukhin, Olga Yu. Koval, Demid A. Kirilenko, Alexey D. Bolshakov, G. A. Sapunov |
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| Rok vydání: | 2019 |
| Předmět: |
Diffraction
Photoluminescence Materials science Condensed matter physics 010405 organic chemistry Heterojunction General Chemistry Crystal structure Nitride 010402 general chemistry Condensed Matter Physics 01 natural sciences 0104 chemical sciences symbols.namesake Transmission electron microscopy symbols General Materials Science Raman spectroscopy Molecular beam epitaxy |
| Zdroj: | Crystal Growth & Design. 19:4510-4520 |
| ISSN: | 1528-7505 1528-7483 |
| Popis: | III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen concentration up to 2.12% were grown on Si(001) by plasma assisted molecular beam epitaxy. Dependence of nitrogen incorporation on the growth conditions and its effect on the crystal structure were investigated via analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data. Continuous redshift and a substantial increase in intensity of the photoluminescence emission spectra were observed upon increase of nitrogen content. The effect of antiphase disorder in GaP buffer on the GaPN epilayer properties was studied. It was found that antiphase boundaries, protruding from the GaP/Si to the GaPN/GaP heterointerface, change their orientation and self-annihilate in the dilute nitride layer even with a low (0.5%) nitrogen content. |
| Databáze: | OpenAIRE |
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