| Autor: |
N.V. Babushkina, L.N. Bykova, Sergei Malyshev, L.I. Romanova |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). |
| DOI: |
10.1109/asdam.2000.889520 |
| Popis: |
Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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