Extending gate dielectric scaling limit by use of nitride or oxynitride

Autor:	Tso-Ping Ma, J.J. Schmitt, J.W. Golz, X.W. Wang, Y. Shi, G.J. Cui, B.L. Halpen, T. Tamagawa
Rok vydání:	2002
Předmět:	Materials science Silicon oxynitride Silicon business.industry Gate dielectric chemistry.chemical_element Equivalent oxide thickness Dielectric Nitride chemistry.chemical_compound Scaling limit chemistry Silicon nitride Electronic engineering Optoelectronics business
Zdroj:	1995 Symposium on VLSI Technology. Digest of Technical Papers.
DOI:	10.1109/vlsit.1995.520881
Popis:	Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify the theoretical trend. These results suggest that extending the scaling limit well below 4 nm of EOT is possible with the JVD nitride.
Databáze:	OpenAIRE
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