Phosphorous doped SOG as a pre-metal-dielectric for sub-50nm technology nodes
| Autor: | Werner Graf, Markus Schardin, Hans-Peter Sperlich, Ines Uhlig, Arabinda Das, Momtchil Stavrev, Heike Prenz |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Doping Mineralogy Phosphor Dielectric Chemical vapor deposition Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Chemical-mechanical planarization Compatibility (mechanics) Optoelectronics Electrical and Electronic Engineering Material properties business Borophosphosilicate glass |
| Zdroj: | Microelectronic Engineering. 85:2085-2088 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2008.04.002 |
| Popis: | The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically. |
| Databáze: | OpenAIRE |
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