Electrical properties of microcrystalline Sc3N@C80 fullerene
Autor: | Masamichi Sakaino, Yong Sun, Kenta Kirimoto, Tsuyoshi Takase |
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Rok vydání: | 2012 |
Předmět: | |
Zdroj: | Applied Physics A. 112:927-931 |
ISSN: | 1432-0630 0947-8396 |
DOI: | 10.1007/s00339-012-7449-6 |
Popis: | The electrical properties of microcrystalline Sc3N@C80 fullerene with fcc structure are studied by measuring both d.c. conductivity temperature dependence and a.c. impedance. Below 450 K the Sc3N@C80 sample has an energy band gap of 1.71 eV, which does not depend on the strength of the applied electric field. But when the temperature is above 450 K, a phase transition which results in a small band gap of 1.22 eV occurs under electric field strengths larger than 1 kV/cm. We also found from Cole–Cole plots of a.c. impedance that the contact resistance at the Au/Sc3N@C80 interface is less than that at the Au/C60 interface. |
Databáze: | OpenAIRE |
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