ESD-Protected Wideband CMOS LNAs Using Modified Resistive Feedback Techniques With Chip-on-Board Packaging

Autor:	Jenshan Lin, Jinghong Chen, L.A. Rigge, Tienyu Chang
Rok vydání:	2008
Předmět:	Power gain Engineering Radiation business.industry Amplifier Electrical engineering Condensed Matter Physics Noise figure Low-noise amplifier law.invention Capacitor CMOS law Electronic engineering Electrical and Electronic Engineering Wideband business Intermodulation
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 56:1817-1826
ISSN:	1557-9670 0018-9480
Popis:	A novel modified resistive feedback structure for designing wideband low-noise amplifiers (LNAs) is proposed and demonstrated in this paper. Techniques including feedback through a source follower, an R-C feedback network, a gate peaking inductor inside the feedback loop, and neutralization capacitors are used. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Two LNAs, LNA1 and LNA2, were fabricated using a TSMC digital 90-nm CMOS technology. Both chips were tested on board using chip-on-board packages with ESD diodes added at the inputs and outputs. LNA1 achieves a 3-dB bandwidth of 9 GHz with 10 dB of power gain and a minimum noise figure (NF) of 4.2 dB. LNA2 achieves a 3-dB bandwidth of 3.2 GHz with 15.5 dB of power gain and a minimum NF of 1.76 dB. The two LNAs have third-order intermodulation intercept points of 8 and 9 dBm. Their power consumptions are 20 and 25 mW with a 1.2-V supply, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6b3c6a6a22f918f4731df8b069101579 https://doi.org/10.1109/tmtt.2008.927301 Zobrazit plný text záznamu