Facile fabrication of carbon nanotube network thin film transistors for device platforms
Autor: | N.O.V. Plank, Han Yue Zheng |
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Rok vydání: | 2017 |
Předmět: |
Nanotube
Fabrication Materials science business.industry Bioengineering Nanotechnology Percolation threshold Buckypaper 02 engineering and technology Carbon nanotube 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention Potential applications of carbon nanotubes Thin-film transistor law Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business |
Zdroj: | International Journal of Nanotechnology. 14:505 |
ISSN: | 1741-8151 1475-7435 |
DOI: | 10.1504/ijnt.2017.082473 |
Popis: | Carbon nanotube network thin film transistors with channel lengths of 10-40 μm are fabricated from a nanotube buckypaper with 99% semiconducting carbon nanotubes by surfactant free solution routes. The carbon nanotubes are suspended in 1,2-dichlorobenzene by ultrasonication at concentrations of 7.9 μg/ml, 3.4 μg/ml and 2.6 μg/ml, resulting in carbon nanotube field effect transistors with tube densities ranging from 5 tube/μm2 up to 32 tube/μm2. The device percolation threshold is 11 tube/μm2 with optimum device performances of on/off current ratio 7200, mobility 0.55 cm2/V·s and Vth = +1 V. Devices with tube density above the percolation threshold are typically metallic-like. By encapsulating with poly-4-vinylphenol cross-linked with poly-(melamine-co-formaldehyde), the hysteresis becomes independent of channel length and the device performance approaches the best devices at the percolation threshold. |
Databáze: | OpenAIRE |
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