GaAs under Intense Ultrafast Excitation: Response of the Dielectric Function
| Autor: | L. Huang, J. Paul Callan, Eric Mazur, Eli N. Glezer |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Physical Review Letters. 80:185-188 |
| ISSN: | 1079-7114 0031-9007 |
| DOI: | 10.1103/physrevlett.80.185 |
| Popis: | We used a new broadband spectroscopic technique to measure the dielectric function of GaAs over the spectral range of 1.5--3.5 eV following intense 70-fs laser excitation. The results provide the most detailed information thus far on the electron and lattice dynamics both above and below the fluence threshold for permanent damage, ${F}_{\mathrm{th}}\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}1.0\phantom{\rule{0ex}{0ex}}\mathrm{kJ}/{\mathrm{m}}^{2}$. There are three distinct regimes of behavior: lattice heating $(l{0.5F}_{\mathrm{th}})$, lattice disordering (0.6--0.8) ${F}_{\mathrm{th}}$, and a semiconductor-to-metal transition $(g{0.8F}_{\mathrm{th}})$. Below ${F}_{\mathrm{th}}$, the changes are completely reversible. |
| Databáze: | OpenAIRE |
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