Analytical Design and Experimental Verification of Lateral Superjunction Based on Global Region Normalization Method
| Autor: | Yang Kun, Zhu Xuhan, Boyong He, Ming Qiao, Sen Zhang, Zhaoji Li, Bo Zhang, Zhang Wentong, Zhuo Wang |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 68:2372-2377 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2021.3066561 |
| Popis: | The global region normalization (GRN) method is proposed to optimize the lateral superjunction (SJ), in this article. The GRN features normalizations in the global doping range of the SJ from zero to the maximum doping concentration ${N}_{\text {max}}$ that was theoretically determined by the pillar width ${W}_{\text {SJ}}$ . Then the optimization covers all the possible design points of the SJ. For the SJ with given ${W}_{\text {SJ}}$ and pillar length ${L}_{\text {SJ}}$ , the specific ON-resistance ${R}_{\text {on,sp}}$ and breakdown voltage ${V}_{\text {B}}$ are normalized in the global region of the doping concentra- tion ${N}_{\text {SJ}}$ . With the GRN method, the global normalization function ${f}_{\eta }$ is deduced to reflect the quantitative variation trend of ${R}_{\text {on,sp}}$ - ${V}_{\text {B}}$ and a design formula of the optimized ${N}_{\text {SJ}}$ is presented. Furthermore, lateral SJ devices were fabricated according to the formula. The measured ${R}_{\text {on,sp}}$ values of the SJ devices are reduced by almost 35% when compared with the theoretical limit of the triple RESURF device in a voltage range of 100–400 V. The experiments also reveal that the measured net ${R}_{\text {on,sp}}$ of the SJ region approaches the ${R}_{\text {on.sp}} \propto {V}_{\text {B}}^{{1.03}}$ relationship. |
| Databáze: | OpenAIRE |
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