| Autor: |
A. Podgaynaya, Martin Pfost, Matthias Stecher, Dragos Costachescu |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 International Semiconductor Conference. |
| DOI: |
10.1109/smicnd.2009.5336696 |
| Popis: |
Large DMOS transistors are key devices in many smart power ICs where they are often subject to self-heating. This can lead to excessive temperatures especially for shrinked devices in new technologies, asking for accurate modeling by electro-thermal simulations. Crucial for this turned out to be the correct description of the electrical DMOS behavior including its temperature dependency up to thermal runaway. Therefore, we propose a simple DMOS model suitable for electro-thermal simulations, being valid up to very high temperatures, even though device characteristics for moderate temperatures are sufficient for parameter extraction. Its validity will be shown by comparison to measurements up to thermal runaway. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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