| Popis: |
Recent development of topological materials has opened up a new paradigm of material research. Unique electronics properties make these materials interesting to study new physics of materials. Thin film epitaxial growth gives an additional control parameter to design different experiments. For example, even though Cd 3 As 2 is a 3D Dirac semimetal, thin film Cd 3 As 2 shows 2D transport with quantum hall effect with surface Dirac node. Along with interesting physics, unique properties of this material can be exploited for a new class of electronics materials. High mobility $(\sim 20,000\ \mathrm{cm}^{2}/\mathrm{Vs})$ and high Fermi velocity $(2\times 10^{6}\mathrm{m}/\mathrm{s})$ make Cd 3 As 2 a suitable candidate for RF devices. In this abstract, we report the first demonstration of field effect transistors (FETs) with Cd 3 As 2 channel. |
