Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations
| Autor: | Mietek Bakowski, Jang-Kwon Lim, Juan Colmenares, Hans-Peter Nee, Diane-Perle Sadik |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Fault (power engineering) law.invention chemistry.chemical_compound chemistry Control and Systems Engineering law MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Silicon carbide Optoelectronics Power semiconductor device Transient (oscillation) Electrical and Electronic Engineering business Short circuit Hardware_LOGICDESIGN Voltage |
| Zdroj: | IEEE Transactions on Industrial Electronics. 68:2608-2616 |
| ISSN: | 1557-9948 0278-0046 |
| DOI: | 10.1109/tie.2020.2972442 |
| Popis: | The temperature evolution during a short-circuit (SC) fault in the dies of three different silicon carbide (SiC) 1200-V power devices is presented in this article. Transient electrothermal simulations are performed based on the reconstructed structure of commercially available devices. The simulations reveal the location of the hottest point in each device. The nonisothermal electrical analysis supports the necessity to turn- off SC events rapidly to protect the immunity of the device after a fault. The analysis also reveal differences in delay required to turn- off devices depending on their type. A thorough analysis of the temperature rise in the die of the SiC metal-oxide semiconductor field-effect transistors (MOSFET) device is also presented, where the maximum temperature with regards to different fault cases and circuit characteristics is presented. The impact of the gate resistance, circuit inductance, detection time, drain-source voltage, and gate-source voltage are considered. |
| Databáze: | OpenAIRE |
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