13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
| Autor: | Dongku Kang, Minsu Kim, Su Chang Jeon, Wontaeck Jung, Jooyong Park, Gyosoo Choo, Dong-kyo Shim, Anil Kavala, Seung-Bum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun-Wook Park, Byung-Jun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyunjin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Youngsun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-ghee Hahn, Ki-sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim, Inryoul Lee, Seung hyun Moon, Jeongdon Ihm, Dae Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kye Hyun Kyung |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Bit cell business.industry Computer science Nand flash memory 020208 electrical & electronic engineering Electrical engineering NAND gate 02 engineering and technology 01 natural sciences S interface 0103 physical sciences Computer data storage 0202 electrical engineering electronic engineering information engineering Bandwidth (computing) business Throughput (business) Data transmission |
| Zdroj: | ISSCC |
| Popis: | Data storage is one of the hottest discussion topics in today’s connected world. The amount of data growth is expected to be exponential, while budget and space remain constricted. Since the transformation of storage device from planar NAND to 3D V-NAND [1], the areal density of semiconductor storage devices has continuously evolved and has surpassed the density of magnetic hard drives. By providing the largest storage capacity in the smallest footprint, 3D V-NAND has been leading the data center revolution in recent years. However, 3D-technology scaling faces several technical challenges [2]. (1) As the number of WL stacks increases the channel-hole etch process becomes a limit, since the total WL-mold height increases. (2) Interference between cells increases since the distance between WLs becomes smaller. (3) Faster data transfer speeds are required to support higher IO bandwidth. |
| Databáze: | OpenAIRE |
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