Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
| Autor: | M. L. Reed, Nadia A. El-Masry, M. O. Luen, J. M. Zavada, M. J. Reed, E. A. Berkman, F. E. Arkun, Salah M. Bedair |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Fermi level Doping Fermi energy Magnetic semiconductor Condensed Matter::Materials Science Paramagnetism symbols.namesake Ferromagnetism symbols Condensed Matter::Strongly Correlated Electrons Electronic band structure |
| Zdroj: | Applied Physics Letters. 86:102504 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1881786 |
| Popis: | GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In addition, GaMnN deposited using growth parameters normally yielding a nonferromagnetic film becomes strongly ferromagnetic with the addition of magnesium, an acceptor dopant. Based upon these observations, it seems that ferromagnetism in this material system depends on the relative position of the Mn energy band and the Fermi level within the GaMnN band gap. Only when the Fermi level closely coincides with the Mn-energy level is ferromagnetism achieved. By actively engineering the Fermi energy to be within or near the Mn energy band, room temperature ferromagnetism is realized. |
| Databáze: | OpenAIRE |
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