RF power LDMOSFET on SOI
| Autor: | Dimitri A. Antoniadis, J.A. del Alamo, J.G. Fiorenza |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Amplifier RF power amplifier Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Radio frequency power transmission Electronic Optical and Magnetic Materials Hardware_GENERAL MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Breakdown voltage Power semiconductor device Electrical and Electronic Engineering Power MOSFET business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Electron Device Letters. 22:139-141 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high f/sub t/ are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 /spl mu/m the device f/sub t/ is 14 GHz, f/sub max/ is 18 GHz, and the breakdown voltage approaches 25 V. |
| Databáze: | OpenAIRE |
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