Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors
| Autor: | Richard I. Johnson, Ping Mei, G. B. Anderson, J. B. Boyce, M. Hack, Steve E. Ready, R. A. Lujan, David K. Fork |
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| Rok vydání: | 1994 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Inorganic chemistry chemistry.chemical_element Chemical vapor deposition engineering.material law.invention Amorphous solid chemistry.chemical_compound Polycrystalline silicon chemistry law Thin-film transistor engineering Optoelectronics Crystallization Thin film business |
| Zdroj: | Applied Physics Letters. 64:1132-1134 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.110829 |
| Popis: | A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a‐Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out‐diffusion and microstructure show that hydrogen out‐diffusion depends strongly on film structure and the laser energy density. Both high quality and low leakage bottom gate polycrystalline silicon and a‐Si:H thin film transistors were monolithically fabricated on the same Corning 7059 glass substrate with a maximum process temperature of only 350 °C. |
| Databáze: | OpenAIRE |
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