Carbon structural transitions and ohmic contacts on 4H-SiC
| Autor: | William C. Mitchel, W. Eugene Collins, G. R. Landis, Weijie Lu, Candis A. Thornton |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Annealing (metallurgy) Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid symbols.namesake Carbon film Amorphous carbon Materials Chemistry symbols Carbide-derived carbon Graphite Electrical and Electronic Engineering Composite material Raman spectroscopy Ohmic contact |
| Zdroj: | Journal of Electronic Materials. 32:426-431 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | The structural properties of sputtered carbon films on SiC are investigated using X-ray photoelectron spectroscopy (XPS) and Raman scattering. The as-deposited films are amorphous with an sp2/sp3 ratio of 1. The sp2 carbon structures gradually increase with increasing temperatures and consist of amorphous aromatic-like carbon, polyene-like carbon, and nano-size graphite flakes. Schottky contacts on carbon/SiC are converted to ohmic contacts after annealing. The concentration of nano-graphitic flakes relative to the aromatic-like and polyene-like carbon increases nearly linearly with annealing temperature. Stacked graphitic structures are not observed. The specific contact resistivities are at 10−3–10−4Ωcm2 on the carbon/SiC after annealing from 1050°C to 1350°C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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