Direct measurement of topography-dependent charging of patterned oxide/semiconductor structures

Autor:	J. B. Kruger, J. L. Shohet, G. S. Upadhyaya
Rok vydání:	2007
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Scanning electron microscope business.industry chemistry.chemical_element Plasma Electron Electron cyclotron resonance Ion Optics chemistry Microscopy Wafer business
Zdroj:	Applied Physics Letters. 91:182108
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2805023
Popis:	Electron shading, or topography-dependent charging, occurs during plasma exposure of wafers with high-aspect-ratio features due to an imbalance between the electron and ion currents that reach the feature bottoms. High-aspect-ratio pit structures were exposed to an electron cyclotron resonance plasma. The surface potential of the structures after plasma exposure was measured with scanning surface-potential microscopy (SSPM). The results show that SSPM can be used to measure the differential charging in a high-aspect-ratio pit. In situ depletion of the plasma-induced charge with ultraviolet radiation was time resolved using SSPM. A circuit model is used to explain the experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6aca924b39221d00518981b15717241f https://doi.org/10.1063/1.2805023 Zobrazit plný text záznamu