| Autor: |
Hung-Pin D. Yang, Wen-Chang Jiang, Chia-Pin Sung, Mei-Li Wang, Yeung-Sy Su |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
Optoelectronic Materials and Devices II. |
| ISSN: |
0277-786X |
| Popis: |
We have made A1GaAs/GaAs gain-guided two-dimensional (8x8 and 4x4) vertical-cavity surface-emitting laser array inthe 850-nm range for optical communication applications. Higher optical power with nearly single transverse mode outputcan be achieved by using high-density two-dimensional VCSEL arrays with smaller emitting element windows ( 5 tm). Thedistributed Bragg reflectors (DBRs) of the VCSELs consist of Al0 2Ga083As/AIAs quarter-wave stacks. The GRINSCHactive region is consisted of an undoped three-quantum-well GaAs/A103Ga07As and two undoped linearly graded AlGa1Asconfmement layers. The emitting windows of the individual VCSEL elements are 5 imx5 .tm. A high cw optical power of15.3 mW was measured for a 8x8 array, with a maximum pulsed optical power of 28 mW at 160 mA. The spectrum of theVCSEL array showed single transverse mode characteristics. The near-field characteristics of the arrays were measured.Almost all the VCSEL elements emitted TEM00 mode. The modulation characteristics of the VCSEL arrays were alsomeasured at different operating current.Keywords: vertical-cavity, surface-emitting lasers, 2D VCSEL array, spectrum, modulation |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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