Lower crystallization temperature of sol-gel PbTiO3 on Ti/Pt-coated substrates
| Autor: | T. P. Velilla, P.J. Retuert, R. E. Avila |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Mechanical Engineering Pyrochlore Analytical chemistry engineering.material Condensed Matter Physics law.invention Overlayer Tetragonal crystal system Mechanics of Materials law Phase (matter) engineering General Materials Science Thin film Crystallization Sol-gel Perovskite (structure) |
| Zdroj: | Journal of Materials Research. 14:2369-2372 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.1999.0316 |
| Popis: | PbTiO3 (PT) thin films have been deposited by sol-gel on Pt/Si, SiO2/Si, Pt/Ti/SiO2/Si, and Ti/Pt/Ti/SiO2/Si and annealed for 45 min in the 400–670 °C range. Analysis by x-ray diffraction (XRD) and spectroscopic ellipsometry shows that the Ti overlayer promotes early crystallization in the tetragonal perovskite phase, reducing the presence of a second phase, tentatively identified as pyrochlore, starting by 450 %C. The refractive index and extinction coefficient (n, k) of the PT film increase rapidly with the sintering temperature in the range of 450–570 °C and saturate by 570 °C to values of n varying from 2.4 to 2.9, and k from 0.03 to 0.3, over the 1.65–2.95 eV range. Most of the increase of n is related to thin film densification. |
| Databáze: | OpenAIRE |
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