A symmetric bipolar structure
| Autor: | V. V. Rakitin |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Heterostructure-emitter bipolar transistor business.industry Transistor Bipolar junction transistor Structure (category theory) Function (mathematics) Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Base (group theory) law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Russian Microelectronics. 29:91-96 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1007/bf02773240 |
| Popis: | A new type of device, symmetric bipolar structure, is discussed. The base of this structure is undoped unlike in conventional bipolar transistors. The structure can function both as annpn and as apnp lowvoltage transistor. The performance of the submicron symmetric bipolar structures was numerically evaluated. It is shown that devices based on such structures offer high output capacity and high amplification. They can operate at sizes of 100 nm or less. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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