Improved Electrical Characteristics of Ge pMOSFETs With ZrO2/HfO2Stack Gate Dielectric
| Autor: | Kuei-Shu Chang-Liao, Li-Jung Liu, Chen-Chien Li, Tzu-Hsiang Su, Wei-Fong Chi, Chia-Chi Tsai, Mong-Chi Li, Yu-Wei Chang, Chung-Hao Fu, Chun-Chang Lu, Ting-Chun Chen |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Condensed matter physics Gate dielectric chemistry.chemical_element Equivalent oxide thickness 02 engineering and technology Yttrium Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry Stack (abstract data type) Logic gate 0103 physical sciences MOSFET Electronic engineering Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | IEEE Electron Device Letters. 37:12-15 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2015.2497348 |
| Popis: | Electrical characteristics of Ge pMOSFETs with HfO2, ZrO2, ZrO2/HfO2, and HfZrO x gate dielectrics are studied in this letter. A lower equivalent oxide thickness (EOT) is obtained in ZrO2 device, which, however, has a higher interface trap density ( $\text{D}_{\mathrm { {it}}})$ due to its inferior dielectric/Ge interface. Interestingly, the $\text{D}_{\mathrm {{it}}}$ and sub-threshold swing of Ge pMOSFETs are clearly reduced by ZrO2/HfO2 stack gate dielectric. A peak hole mobility of 335 cm+ $^{{{2}}}$ /V-s is achieved in ZrO2/HfO2 device thanks to good dielectric/Ge interface. Furthermore, the EOT of ZrO2/HfO2 device is 0.62 nm, and the leakage current is $2\times 10^{{ {-3}}}$ A/cm $^{{{2}}}$ . Therefore, a ZrO2/HfO2 stack gate dielectric is promising for Ge MOSFETs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|